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Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition (2019)

First Author: Huang R

Attributed to: ADEPT - Advanced Devices by ElectroPlaTing funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c8fd00126j

PubMed Identifier: 30411749

Publication URI: http://europepmc.org/abstract/MED/30411749

Type: Journal Article/Review

Parent Publication: Faraday Discussions

ISSN: 1359-6640