Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition. (2019)
Attributed to:
ADEPT - Advanced Devices by ElectroPlaTing
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/c8fd00126j
PubMed Identifier: 30411749
Publication URI: http://europepmc.org/abstract/MED/30411749
Type: Journal Article/Review
Volume: 213
Parent Publication: Faraday discussions
ISSN: 1359-6640