Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOS (2018)
Attributed to:
A Translational Alliance between Newcastle University and Ossur
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2870731
Publication URI: http://dx.doi.org/10.1109/led.2018.2870731
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 11