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Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates (2018)

First Author: Bai J

Attributed to: Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/aaed93

Publication URI: http://dx.doi.org/10.1088/1361-6641/aaed93

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 12