Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys (2019)
Attributed to:
Nitride Photovoltaic Materials for Full Spectrum Utilization
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/aaeec9
Publication URI: http://dx.doi.org/10.1088/1361-6463/aaeec9
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 4