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Making amorphous ZnO: Theoretical predictions of its structure and stability (2019)

First Author: Mora-Fonz D

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.99.014202

Publication URI: http://dx.doi.org/10.1103/physrevb.99.014202

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 1