TDDB Mechanism in a-Si/TiO 2 Nonfilamentary RRAM Device (2019)

First Author: Ma J

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2018.2881294

Publication URI: http://dx.doi.org/10.1109/ted.2018.2881294

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 1