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Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states (2018)

First Author: Mullins J

Attributed to: Efficiency Enhancement of Silicon Photovoltaic Solar Cells by Passivation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5036718

Publication URI: http://dx.doi.org/10.1063/1.5036718

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 3

ISSN: 10897550 00218979