Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs (2018)

First Author: Cho S

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/el.2018.1097

Publication URI: http://dx.doi.org/10.1049/el.2018.1097

Type: Journal Article/Review

Parent Publication: Electronics Letters

Issue: 15