Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies (2019)

First Author: Findlay E

Attributed to: New Power Device Architectures in Silicon funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2018.2882687

Publication URI: http://dx.doi.org/10.1109/ted.2018.2882687

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 1