Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. (2018)
Attributed to:
Beyond Blue: New Horizons in Nitrides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/ma11091736
PubMed Identifier: 30223545
Publication URI: http://europepmc.org/abstract/MED/30223545
Type: Journal Article/Review
Volume: 11
Parent Publication: Materials (Basel, Switzerland)
Issue: 9
ISSN: 1996-1944