Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. (2018)

First Author: Christian G
Attributed to:  Beyond Blue: New Horizons in Nitrides funded by EPSRC


No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma11091736

PubMed Identifier: 30223545

Publication URI: http://europepmc.org/abstract/MED/30223545

Type: Journal Article/Review

Volume: 11

Parent Publication: Materials (Basel, Switzerland)

Issue: 9

ISSN: 1996-1944