Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors (2018)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5006255
Publication URI: http://dx.doi.org/10.1063/1.5006255
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 2