Interaction of Radiation-Induced Self-Interstitials with Vacancy-Oxygen Related Defects V n O 2 (n from 1 to 3) in Silicon (2018)
Attributed to:
SuperSilicon PV: extending the limits of material performance
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201800609
Publication URI: http://dx.doi.org/10.1002/pssa.201800609
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 10