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Interaction of Radiation-Induced Self-Interstitials with Vacancy-Oxygen Related Defects V n O 2 (n from 1 to 3) in Silicon (2018)

First Author: Murin L

Attributed to: SuperSilicon PV: extending the limits of material performance funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201800609

Publication URI: http://dx.doi.org/10.1002/pssa.201800609

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 10