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Behavioral Modeling of GaN Power Amplifiers Using Long Short-Term Memory Networks (2018)

First Author: Chen P

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/inmmic.2018.8429984

Publication URI: http://dx.doi.org/10.1109/inmmic.2018.8429984

Type: Conference/Paper/Proceeding/Abstract