Behavioral Modeling of GaN Power Amplifiers Using Long Short-Term Memory Networks (2018)

First Author: Chen P
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/inmmic.2018.8429984

Publication URI: http://dx.doi.org/10.1109/inmmic.2018.8429984

Type: Conference/Paper/Proceeding/Abstract