Large exchange bias induced by polycrystalline Mn 3 Ga antiferromagnetic films with controlled layer thickness (2018)
Attributed to:
Spintronic Devices for Integrated Logic Circuits
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/aabd8e
Publication URI: http://dx.doi.org/10.1088/1361-6463/aabd8e
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 21