Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate (2018)
Attributed to:
High performance III-V quantum dot photodetectors for low SWaP infrared devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.infrared.2018.03.004
Publication URI: http://dx.doi.org/10.1016/j.infrared.2018.03.004
Type: Journal Article/Review
Parent Publication: Infrared Physics & Technology
ISSN: 1350-4495