Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate (2018)

First Author: Deng Z
Attributed to:  High performance III-V quantum dot photodetectors for low SWaP infrared devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.infrared.2018.03.004

Publication URI: http://dx.doi.org/10.1016/j.infrared.2018.03.004

Type: Journal Article/Review

Parent Publication: Infrared Physics & Technology

ISSN: 1350-4495