Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors (2019)

First Author: Jiang S
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2019.2897602

Publication URI: http://dx.doi.org/10.1109/ted.2019.2897602

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 4