Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography (2018)

First Author: Durrani Z
Attributed to:  Silicon Based Qubits Using Quantum Dot Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5050773

Publication URI: http://dx.doi.org/10.1063/1.5050773

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 14