Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material. (2018)

First Author: Konstantinou K
Attributed to:  MATERIALS CHEMISTRY HIGH END COMPUTING CONSORTIUM funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1073/pnas.1800638115

PubMed Identifier: 29735691

Publication URI: http://europepmc.org/abstract/MED/29735691

Type: Journal Article/Review

Volume: 115

Parent Publication: Proceedings of the National Academy of Sciences of the United States of America

Issue: 21

ISSN: 0027-8424