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Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers (2018)

First Author: Choi F

Attributed to: Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5027680

Publication URI: http://dx.doi.org/10.1063/1.5027680

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 5