📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Ion-beam-induced bending of semiconductor nanowires. (2018)

First Author: Hanif I
Attributed to:  In-Situ TEM Studies of Ion-Irradiated Materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6528/aac659

PubMed Identifier: 29781443

Publication URI: http://europepmc.org/abstract/MED/29781443

Type: Journal Article/Review

Volume: 29

Parent Publication: Nanotechnology

Issue: 33

ISSN: 0957-4484