Effect of HCl cleaning on InSb-Al 2 O 3 MOS capacitors (2019)
Attributed to:
EPSRC Engineering Fellowships for Growth: Narrow Band-gap Semiconductors for Integrated Sensing and Communications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ab0331
Publication URI: http://dx.doi.org/10.1088/1361-6641/ab0331
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 3