📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Effect of HCl cleaning on InSb-Al 2 O 3 MOS capacitors (2019)

First Author: Vavasour O

Attributed to: EPSRC Engineering Fellowships for Growth: Narrow Band-gap Semiconductors for Integrated Sensing and Communications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ab0331

Publication URI: http://dx.doi.org/10.1088/1361-6641/ab0331

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 3