Band alignments at Ga2O3 heterojunction interfaces with Si and Ge (2018)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5034459
Publication URI: http://dx.doi.org/10.1063/1.5034459
Type: Journal Article/Review
Parent Publication: AIP Advances
Issue: 6