Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices (2019)

First Author: Maji S

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.5079574

Publication URI: http://dx.doi.org/10.1116/1.5079574

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B

Issue: 2