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First principles calculations of optical properties for oxygen vacancies in binary metal oxides. (2019)

First Author: Strand J
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5078682

PubMed Identifier: 30709253

Publication URI: http://europepmc.org/abstract/MED/30709253

Type: Journal Article/Review

Volume: 150

Parent Publication: The Journal of chemical physics

Issue: 4

ISSN: 0021-9606