First principles calculations of optical properties for oxygen vacancies in binary metal oxides. (2019)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5078682
PubMed Identifier: 30709253
Publication URI: http://europepmc.org/abstract/MED/30709253
Type: Journal Article/Review
Volume: 150
Parent Publication: The Journal of chemical physics
Issue: 4
ISSN: 0021-9606