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Impact of the Gate Oxide Reliability of SiC MOSFETs on the Junction Temperature Estimation Using Temperature Sensitive Electrical Parameters (2018)

First Author: Gonzalez J

Attributed to: High Current Module and Technologies Optimised for HVDC funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ecce.2018.8557810

Publication URI: http://dx.doi.org/10.1109/ecce.2018.8557810

Type: Conference/Paper/Proceeding/Abstract