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3C-Si? Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-Si? Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE) (2018)

First Author: La Via F

Attributed to: Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.924.913

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.924.913

Type: Journal Article/Review

Parent Publication: Materials Science Forum

ISSN: 02555476