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Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method (2019)

First Author: Cai Y

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ab08bf

Publication URI: http://dx.doi.org/10.1088/1361-6641/ab08bf

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 4