Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method (2019)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ab08bf
Publication URI: http://dx.doi.org/10.1088/1361-6641/ab08bf
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 4