Terahertz electrical writing speed in an antiferromagnetic memory. (2018)
Attributed to:
Antiferromagnetic devices for spintronic memory applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1126/sciadv.aar3566
PubMed Identifier: 29740601
Publication URI: http://europepmc.org/abstract/MED/29740601
Type: Journal Article/Review
Volume: 4
Parent Publication: Science advances
Issue: 3
ISSN: 2375-2548