AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance (2018)

First Author: Elksne M
Attributed to:  Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.23919/eumic.2018.8539896

Publication URI: http://dx.doi.org/10.23919/eumic.2018.8539896

Type: Conference/Paper/Proceeding/Abstract