Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology (2019)

First Author: Chandrasekar H
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2019.2896156

Publication URI: http://dx.doi.org/10.1109/ted.2019.2896156

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 4