Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology (2019)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2019.2896156
Publication URI: http://dx.doi.org/10.1109/ted.2019.2896156
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 4