Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates (2018)

First Author: Chandrasekar H
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2864562

Publication URI: http://dx.doi.org/10.1109/led.2018.2864562

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 10