Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates (2018)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2864562
Publication URI: http://dx.doi.org/10.1109/led.2018.2864562
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 10