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Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. (2018)

First Author: Svrcek V

Attributed to: Plasma-based synthesis of low-cost and environmentally friendly quantum dots with tailored energy band structure funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/nano8121039

PubMed Identifier: 30545138

Publication URI: http://europepmc.org/abstract/MED/30545138

Type: Journal Article/Review

Volume: 8

Parent Publication: Nanomaterials (Basel, Switzerland)

Issue: 12

ISSN: 2079-4991