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Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector (2019)

First Author: Deng Z

Attributed to: Development of Type II Superlattice IR Detectors Monolithically Integrated on Silicon Substrates. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.infrared.2019.06.011

Publication URI: http://dx.doi.org/10.1016/j.infrared.2019.06.011

Type: Journal Article/Review

Parent Publication: Infrared Physics & Technology