Interstitial Oxide Ion Conductivity in the Langasite Structure: Carrier Trapping by Formation of (Ga,Ge)2O8 Units in La3Ga5-x Ge1+x O14+x/2 (0 < x = 1.5). (2019)

First Author: Diaz-Lopez M
Attributed to:  Integration of Computation and Experiment for Accelerated Materials Discovery funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.chemmater.9b01734

PubMed Identifier: 32063675

Publication URI: http://europepmc.org/abstract/MED/32063675

Type: Journal Article/Review

Volume: 31

Parent Publication: Chemistry of materials : a publication of the American Chemical Society

Issue: 15

ISSN: 0897-4756