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The role of surface reduction in the formation of Ti interstitials. (2019)

First Author: Gaberle J

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c9ra01015g

PubMed Identifier: 35515850

Publication URI: http://europepmc.org/abstract/MED/35515850

Type: Journal Article/Review

Volume: 9

Parent Publication: RSC advances

Issue: 22

ISSN: 2046-2069