📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Achieving high performance Ga 2 O 3 diodes by adjusting chemical composition of tin oxide Schottky electrode (2019)

First Author: Du L

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ab1721

Publication URI: http://dx.doi.org/10.1088/1361-6641/ab1721

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 7