Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substrates (2019)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5097411
Publication URI: http://dx.doi.org/10.1063/1.5097411
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 22