Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor (2019)
Attributed to:
New Power Device Architectures in Silicon
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2019.2911994
Publication URI: http://dx.doi.org/10.1109/led.2019.2911994
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 6