Multi-Channel AlGaN/GaN Lateral Schottky Barrier Diodes on Low-Resistivity Silicon for Sub-THz Integrated Circuits Applications (2019)

First Author: Eblabla A
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2019.2912910

Publication URI: http://dx.doi.org/10.1109/led.2019.2912910

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 6