Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces (2019)

First Author: Zhang Z
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5097567

Publication URI: http://dx.doi.org/10.1063/1.5097567

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 16