Turn-off mechanisms in thin-film source-gated transistors with applications to power devices and rectification (2019)
Attributed to:
Design for high-yield manufacturing of printed circuits
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5088681
Publication URI: http://dx.doi.org/10.1063/1.5088681
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 18