Raman Thermography of Peak Channel Temperature in $\beta$ -Ga 2 O 3 MOSFETs (2019)

First Author: Pomeroy J
Attributed to:  High Performance Buffers for RF GaN Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2887278

Publication URI: http://dx.doi.org/10.1109/led.2018.2887278

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 2