Insertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors. (2019)

First Author: Zheng S
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c8nr07812b

PubMed Identifier: 30816375

Publication URI: http://europepmc.org/abstract/MED/30816375

Type: Journal Article/Review

Volume: 11

Parent Publication: Nanoscale

Issue: 11

ISSN: 2040-3364