Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO 2 /Al 2 O 3 Gate-Stack (2019)

First Author: Urresti J
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2019.2901310

Publication URI: http://dx.doi.org/10.1109/ted.2019.2901310

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 4