The Nonlinear Drain-Source Capacitance Effect on Continuous-Mode Class-B/J Power Amplifiers (2019)

First Author: Mokhti Z
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tmtt.2019.2918309

Publication URI: http://dx.doi.org/10.1109/tmtt.2019.2918309

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Microwave Theory and Techniques

Issue: 7