The Nonlinear Drain-Source Capacitance Effect on Continuous-Mode Class-B/J Power Amplifiers (2019)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tmtt.2019.2918309
Publication URI: http://dx.doi.org/10.1109/tmtt.2019.2918309
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Microwave Theory and Techniques
Issue: 7